The XC61FN2012MR-G series are highly accurate, low power consumption voltage detectors, manufactured using CMOS and laser trimming technologies. A delay circuit is built-in to each detector.
Detect voltage is extremely accurate with minimal temperature drift.
Both CMOS and N-ch open drain output configurations are available. Since the delay circuit is built-in, peripherals are unnecessary and high density mounting is possible.
XC61FN2012MR-G特點:
高電壓檢測精度: ±2%
低消耗電流: 1.0μA(TYP.)[VIN=2.0V]
檢測電壓范圍: 能夠在1.6V~6.0V范圍內(nèi)以0.1V間隔設定
工作電壓范圍: 0.7V~10.0V
檢測電壓溫度特性: ±100ppm/℃(TYP.)
內(nèi)置延遲電路: 1ms~50ms 50ms~200ms 80ms~400ms
輸出形式; N溝道開漏/CMOS輸出
小型封裝 : SOT-23, SOT-89, TO-92
XC61FN2012MR-G應用:微處理器復位電路、內(nèi)存?zhèn)溆秒姵仉娐?、上電復位電路、電源故障檢測、系統(tǒng)電池壽命和充電電壓監(jiān)視、延遲電路